Infineon HEXFET N-Channel MOSFET, 2.7 A, 30 V, 3-Pin SOT-23 IRLML2030TRPBF
- RS Stock No.:
- 725-9353
- Mfr. Part No.:
- IRLML2030TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£4.58
(exc. VAT)
£5.50
(inc. VAT)
FREE delivery for orders over £50.00
- 600 unit(s) ready to ship
- Plus 400 unit(s) ready to ship from another location
- Plus 2,080 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
20 - 180 | £0.229 | £4.58 |
200 - 480 | £0.119 | £2.38 |
500 - 980 | £0.112 | £2.24 |
1000 - 1980 | £0.106 | £2.12 |
2000 + | £0.096 | £1.92 |
*price indicative
- RS Stock No.:
- 725-9353
- Mfr. Part No.:
- IRLML2030TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 2.7 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-23 | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 100 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.3V | |
Minimum Gate Threshold Voltage | 1.3V | |
Maximum Power Dissipation | 1.3 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 1.4mm | |
Typical Gate Charge @ Vgs | 1 nC @ 4.5 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 3.04mm | |
Height | 1.02mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.7 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 1 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 3.04mm | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 30V, Infineon
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