Infineon HEXFET N-Channel MOSFET, 2.7 A, 60 V, 3-Pin SOT-23 IRLML0060TRPBF

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£261.00

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£312.00

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6000 - 6000£0.083£249.00
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RS Stock No.:
913-4048
Mfr. Part No.:
IRLML0060TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

92 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.4mm

Typical Gate Charge @ Vgs

2.5 nC @ 4.5 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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