Infineon HEXFET MOSFET, 8.7 A, 150 V TO-220 IRFI4019H-117PXKMA1

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
258-3974
Mfr. Part No.:
IRFI4019H-117PXKMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

150 V

Series

HEXFET

Package Type

TO-220

Mounting Type

Surface Mount

The Infineon digital audio MOSFET half-bridge is specifically designed for class D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Further more, gate charge, body-diode reverse recovery, and internal gate resistance are optimized to improve key class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Low RDS(on)
Dual N-Channel MOSFET
Integrated Half Bridge package
Low Qrr
Environmentally friendly
High power density
Integrated design
Board savings
Low EMI


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