Infineon HEXFET MOSFET, 9.1 A, 200 V, 5-Pin TO-220 IRFI4020H-117PXKMA1
- RS Stock No.:
- 258-3976
- Mfr. Part No.:
- IRFI4020H-117PXKMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£5.70
(exc. VAT)
£6.84
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.85 | £5.70 |
| 20 - 48 | £2.365 | £4.73 |
| 50 - 98 | £2.225 | £4.45 |
| 100 - 198 | £2.08 | £4.16 |
| 200 + | £1.91 | £3.82 |
*price indicative
- RS Stock No.:
- 258-3976
- Mfr. Part No.:
- IRFI4020H-117PXKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.1A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.1A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Dual N-channel MOSFET
High power density
Integrated design
Board savings
Related links
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