Infineon HEXFET MOSFET, 8.7 A, 150 V, 5-Pin TO-220

RS Stock No.:: 258-3973
Mfr. Part No.:: IRFI4019H-117PXKMA1
Brand:: Infineon

Infineon HEXFET MOSFET, 8.7 A, 150 V, 5-Pin TO-220

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RS Stock No.:: 258-3973
Mfr. Part No.:: IRFI4019H-117PXKMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8.7A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	80mΩ
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	10 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8.7A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type TO-220
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 80mΩ
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 10 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFI4019H-117PXKMA1

The Infineon digital audio MOSFET half-bridge is specifically designed for class D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Further more, gate charge, body-diode reverse recovery, and internal gate resistance are optimized to improve key class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Low RDS(on)

Dual N-Channel MOSFET

Integrated Half Bridge package

Low Qrr

Environmentally friendly

High power density

Integrated design

Board savings

Low EMI