Infineon HEXFET Type N-Channel MOSFET, 224 A, 150 V Enhancement TO-247 IRF150P220AKMA1
- RS Stock No.:
- 258-3954
- Mfr. Part No.:
- IRF150P220AKMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
£151.00
(exc. VAT)
£181.25
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 75 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | £6.04 | £151.00 |
| 50 - 100 | £5.738 | £143.45 |
| 125 + | £5.496 | £137.40 |
*price indicative
- RS Stock No.:
- 258-3954
- Mfr. Part No.:
- IRF150P220AKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 224A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 224A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET StrongIRFET is optimized for broadest availability from distribution partners, its increased reliability versus 150°C rated parts.
Optimized Qrr
Lower overshoot voltage
Reduced conduction losses
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