Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 4 A, 55 V, 8-Pin SOIC AUIRF7343QTR
- RS Stock No.:
- 243-9287
- Mfr. Part No.:
- AUIRF7343QTR
- Brand:
- Infineon
Subtotal (1 reel of 4000 units)*
£2,588.00
(exc. VAT)
£3,104.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 12,000 unit(s), ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £0.647 | £2,588.00 |
*price indicative
- RS Stock No.:
- 243-9287
- Mfr. Part No.:
- AUIRF7343QTR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Number of Elements per Chip 2 | ||
The Infineon AUIRF7343QTR specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
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