Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 4 A, 55 V, 8-Pin SOIC AUIRF7343QTR

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Subtotal (1 pack of 2 units)*

£3.84

(exc. VAT)

£4.60

(inc. VAT)

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Last RS stock
  • Final 15,986 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 18£1.92£3.84
20 - 48£1.77£3.54
50 - 98£1.655£3.31
100 - 198£1.535£3.07
200 +£1.42£2.84

*price indicative

Packaging Options:
RS Stock No.:
243-9288
Mfr. Part No.:
AUIRF7343QTR
Brand:
Infineon
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Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

55 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Number of Elements per Chip

2

The Infineon AUIRF7343QTR specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant

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