MPN

Infineon HEXFET 2 Type P, Type N-Channel MOSFET, 4.7 A, -55 V, 8-Pin SOIC AUIRF7343QTR

RS Stock No.:: 243-9288
Mfr. Part No.:: AUIRF7343QTR
Brand:: Infineon

Infineon HEXFET 2 Type P, Type N-Channel MOSFET, 4.7 A, -55 V, 8-Pin SOIC AUIRF7343QTR

Bulk discount available

Subtotal (1 pack of 2 units)*

£3.84

(exc. VAT)

£4.60

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 15,986 unit(s), ready to ship

Units	Per unit	Per Pack*
2 - 18	£1.92	£3.84
20 - 48	£1.77	£3.54
50 - 98	£1.655	£3.31
100 - 198	£1.535	£3.07
200 +	£1.42	£2.84

*price indicative

RS Stock No.:: 243-9288
Mfr. Part No.:: AUIRF7343QTR
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.7A
	Maximum Drain Source Voltage Vds	-55V
	Package Type	SOIC
	Series	HEXFET
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.11mΩ
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.7A
	Maximum Drain Source Voltage Vds -55V
	Package Type SOIC
	Series HEXFET
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.11mΩ
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet - AUIRF7343QTR

The Infineon AUIRF7343QTR specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Advanced Planar Technology

Ultra Low On-Resistance

Logic Level Gate Drive

Dual N and P Channel MOSFET

Surface Mount

Available in Tape & Reel

150°C Operating Temperature

Lead-Free, RoHS Compliant