Infineon HEXFET Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC AUIRF7342QTR
- RS Stock No.:
- 243-9284
- Mfr. Part No.:
- AUIRF7342QTR
- Brand:
- Infineon
Subtotal (1 reel of 4000 units)*
£4,440.00
(exc. VAT)
£5,320.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 4,000 unit(s) shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £1.11 | £4,440.00 |
*price indicative
- RS Stock No.:
- 243-9284
- Mfr. Part No.:
- AUIRF7342QTR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.4 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.4 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Number of Elements per Chip 2 | ||
The Infineon AUIRF7342QTR N-Channel Power MOSFET specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
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