Infineon HEXFET Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC AUIRF7342QTR

Subtotal (1 reel of 4000 units)*

£4,440.00

(exc. VAT)

£5,320.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 4,000 unit(s) shipping from 02 March 2026
  • Plus 999,992,000 unit(s) shipping from 01 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 +£1.11£4,440.00

*price indicative

RS Stock No.:
243-9284
Mfr. Part No.:
AUIRF7342QTR
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

3.4 A

Maximum Drain Source Voltage

55 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Number of Elements per Chip

2

The Infineon AUIRF7342QTR N-Channel Power MOSFET specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant

Related links