Toshiba Silicon P-Channel MOSFET, 3.5 A, 60 V, 3-Pin SOT-23 SSM3J351R,LF(T

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Subtotal 100 units (supplied on a continuous strip)*

£23.70

(exc. VAT)

£28.40

(inc. VAT)

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100 - 200£0.237
250 - 450£0.233
500 - 950£0.228
1000 +£0.214

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Packaging Options:
RS Stock No.:
236-3571P
Mfr. Part No.:
SSM3J351R,LF(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.29e+008 Ω

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

Transistor Material

Silicon

The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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