Toshiba Silicon P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T

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Subtotal (1 reel of 3000 units)*

£327.00

(exc. VAT)

£393.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.109£327.00

*price indicative

RS Stock No.:
236-3568
Mfr. Part No.:
SSM3J338R,LF(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.63e+007 Ω

Maximum Gate Threshold Voltage

1V

Number of Elements per Chip

1

Transistor Material

Silicon

The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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