Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3
- RS Stock No.:
- 787-9222
- Distrelec Article No.:
- 304-02-277
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Brand:
- Vishay
Subtotal (1 pack of 10 units)*
£3.30
(exc. VAT)
£4.00
(inc. VAT)
FREE delivery for orders over £50.00
- 730 unit(s) shipping from 08 September 2025
- Plus 50 unit(s) shipping from 08 September 2025
- Plus 41,640 unit(s) shipping from 15 September 2025
Units | Per unit | Per Pack* |
---|---|---|
10 - 90 | £0.33 | £3.30 |
100 - 490 | £0.309 | £3.09 |
500 - 990 | £0.28 | £2.80 |
1000 - 2490 | £0.263 | £2.63 |
2500 + | £0.247 | £2.47 |
*price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
Each (On a Reel of 3000)
£0.114
(exc. VAT)
£0.137
(inc. VAT)
- RS Stock No.:
- 787-9222
- Distrelec Article No.:
- 304-02-277
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Brand:
- Vishay
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 6 A | |
Maximum Drain Source Voltage | 12 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 19 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 1.7 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Width | 1.4mm | |
Typical Gate Charge @ Vgs | 23 nC @ 8 V | |
Maximum Operating Temperature | +150 °C | |
Length | 3.04mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 1.02mm | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 19 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.7 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 23 nC @ 8 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
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