Toshiba Silicon N-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-23 SSM3K341R,LF(T

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Subtotal (1 reel of 3000 units)*

£603.00

(exc. VAT)

£723.00

(inc. VAT)

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Per Reel*
3000 +£0.201£603.00

*price indicative

RS Stock No.:
236-3579
Mfr. Part No.:
SSM3K341R,LF(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.3e+007 Ω

Maximum Gate Threshold Voltage

2.5V

Transistor Material

Silicon

Number of Elements per Chip

1

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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