Toshiba Silicon N-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-23 SSM3K341R,LF(T

View all MOSFETs

Subtotal (1 reel of 3000 units)*

£603.00

(exc. VAT)

£723.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3,000 unit(s) ready to ship
  • Plus 999,996,000 unit(s) shipping from 12 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.201£603.00

*price indicative

RS Stock No.:
236-3579
Mfr. Part No.:
SSM3K341R,LF(T
Brand:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.3e+007 Ω

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Transistor Material

Silicon

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

Related links