Toshiba Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T

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Subtotal (1 pack of 200 units)*

£13.20

(exc. VAT)

£15.80

(inc. VAT)

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Per unit
Per Pack*
200 - 200£0.066£13.20
400 - 600£0.065£13.00
800 - 1000£0.064£12.80
1200 - 2800£0.06£12.00
3000 +£0.054£10.80

*price indicative

Packaging Options:
RS Stock No.:
236-3582
Mfr. Part No.:
SSM6N7002KFU,LF(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

US6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Transistor Material

Silicon

Number of Elements per Chip

2

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.

Storage temperature range −55 to 150 °C

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