Toshiba Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T
- RS Stock No.:
- 236-3581
- Mfr. Part No.:
- SSM6N7002KFU,LF(T
- Brand:
- Toshiba
Subtotal (1 reel of 3000 units)*
£123.00
(exc. VAT)
£147.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 27,000 unit(s) shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.041 | £123.00 |
*price indicative
- RS Stock No.:
- 236-3581
- Mfr. Part No.:
- SSM6N7002KFU,LF(T
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | US6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 1.2e+006 Ω | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type US6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 1.2e+006 Ω | ||
Maximum Gate Threshold Voltage 2.1V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.
Storage temperature range −55 to 150 °C
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