Toshiba Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T

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Subtotal (1 reel of 3000 units)*

£123.00

(exc. VAT)

£147.00

(inc. VAT)

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  • Plus 999,972,000 unit(s) shipping from 23 February 2026
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3000 +£0.041£123.00

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RS Stock No.:
236-3581
Mfr. Part No.:
SSM6N7002KFU,LF(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

US6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Transistor Material

Silicon

Number of Elements per Chip

2

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.

Storage temperature range −55 to 150 °C

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