Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R

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Subtotal (1 reel of 3000 units)*

£219.00

(exc. VAT)

£264.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000£0.073£219.00
6000 - 6000£0.07£210.00
9000 +£0.066£198.00

*price indicative

RS Stock No.:
171-2402
Mfr. Part No.:
SSM3K339R
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Length

2.9mm

Maximum Operating Temperature

+150 °C

Width

1.8mm

Height

0.7mm

Forward Diode Voltage

1.2V

COO (Country of Origin):
TH
Power Management Switches
DC-DC Converters
1.8-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A)
RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A)
RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A)
RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A)
RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)

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