Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R

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Subtotal (1 pack of 50 units)*

£6.00

(exc. VAT)

£7.00

(inc. VAT)

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Temporarily out of stock
  • 50 unit(s) shipping from 03 November 2025
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Units
Per unit
Per Pack*
50 - 100£0.12£6.00
150 - 450£0.101£5.05
500 - 950£0.087£4.35
1000 +£0.074£3.70

*price indicative

Packaging Options:
RS Stock No.:
171-2471
Mfr. Part No.:
SSM3K339R
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Length

2.9mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

1.1 nC @ 4.2 V

Width

1.8mm

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.7mm

COO (Country of Origin):
TH
Power Management Switches
DC-DC Converters
1.8-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A)
RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A)
RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A)
RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A)
RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)

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