Toshiba Type N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23

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Subtotal 200 units (supplied on a reel)*

£7.60

(exc. VAT)

£9.20

(inc. VAT)

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200 - 200£0.038
300 - 400£0.037
500 - 900£0.037
1000 +£0.035

*price indicative

Packaging Options:
RS Stock No.:
236-3578P
Mfr. Part No.:
SSM3K339R,LF(T
Brand:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

220mΩ

Forward Voltage Vf

-0.85V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

1.1nC

Maximum Operating Temperature

150°C

Height

0.8mm

Standards/Approvals

No

Length

2.4mm

Width

2.9 mm

Automotive Standard

No

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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