Toshiba Silicon N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R,LF(T

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Subtotal 200 units (supplied on a reel)*

£7.60

(exc. VAT)

£9.20

(inc. VAT)

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  • 17,900 unit(s) shipping from 05 February 2026
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Units
Per unit
200 - 200£0.038
300 - 400£0.037
500 - 900£0.037
1000 +£0.035

*price indicative

Packaging Options:
RS Stock No.:
236-3578P
Mfr. Part No.:
SSM3K339R,LF(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.2e+008 Ω

Maximum Gate Threshold Voltage

1.2V

Transistor Material

Silicon

Number of Elements per Chip

1

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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