Toshiba Silicon N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R,LF(T
- RS Stock No.:
- 236-3578P
- Mfr. Part No.:
- SSM3K339R,LF(T
- Brand:
- Toshiba
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Subtotal 200 units (supplied on a reel)*
£7.60
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£9.20
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- 17,900 unit(s) shipping from 15 January 2026
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Units | Per unit |
---|---|
200 - 200 | £0.038 |
300 - 400 | £0.037 |
500 - 900 | £0.037 |
1000 + | £0.035 |
*price indicative
- RS Stock No.:
- 236-3578P
- Mfr. Part No.:
- SSM3K339R,LF(T
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 2 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2.2e+008 Ω | |
Maximum Gate Threshold Voltage | 1.2V | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.2e+008 Ω | ||
Maximum Gate Threshold Voltage 1.2V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
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