Toshiba Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
- RS Stock No.:
- 236-3573P
- Mfr. Part No.:
- SSM3J356R,LF(T
- Brand:
- Toshiba
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£13.40
(exc. VAT)
£16.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,750 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 200 | £0.134 |
| 250 - 450 | £0.131 |
| 500 - 950 | £0.129 |
| 1000 + | £0.12 |
*price indicative
- RS Stock No.:
- 236-3573P
- Mfr. Part No.:
- SSM3J356R,LF(T
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4e+008 Ω | |
| Maximum Gate Threshold Voltage | 2V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4e+008 Ω | ||
Maximum Gate Threshold Voltage 2V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C