Toshiba Type P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

£273.00

(exc. VAT)

£327.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.091£273.00

*price indicative

RS Stock No.:
236-3572
Mfr. Part No.:
SSM3J356R,LF(T
Brand:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

8.3nC

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20 V

Maximum Operating Temperature

150°C

Width

2.9 mm

Standards/Approvals

No

Height

0.8mm

Length

2.4mm

Automotive Standard

No

The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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