Toshiba T2N7002AK Type N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 T2N7002AK,LM(T
- RS Stock No.:
- 236-3585
- Mfr. Part No.:
- T2N7002AK,LM(T
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 250 units)*
£7.75
(exc. VAT)
£9.25
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,250 unit(s) ready to ship
- Plus 43,250 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 250 - 250 | £0.031 | £7.75 |
| 500 - 750 | £0.03 | £7.50 |
| 1000 - 1250 | £0.028 | £7.00 |
| 1500 - 2750 | £0.027 | £6.75 |
| 3000 + | £0.025 | £6.25 |
*price indicative
- RS Stock No.:
- 236-3585
- Mfr. Part No.:
- T2N7002AK,LM(T
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | T2N7002AK | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.27nC | |
| Forward Voltage Vf | -0.87V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Width | 2.9 mm | |
| Length | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series T2N7002AK | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.27nC | ||
Forward Voltage Vf -0.87V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Width 2.9 mm | ||
Length 2.4mm | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.
Storage temperature range −55 to 150 °C
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