Toshiba Silicon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 T2N7002AK,LM(T

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Subtotal (1 pack of 250 units)*

£7.75

(exc. VAT)

£9.25

(inc. VAT)

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  • 1,500 unit(s) ready to ship
  • Plus 44,250 unit(s) shipping from 31 October 2025
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Units
Per unit
Per Pack*
250 - 250£0.031£7.75
500 - 750£0.03£7.50
1000 - 1250£0.028£7.00
1500 - 2750£0.027£6.75
3000 +£0.025£6.25

*price indicative

Packaging Options:
RS Stock No.:
236-3585
Mfr. Part No.:
T2N7002AK,LM(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

1

Transistor Material

Silicon

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.

Storage temperature range −55 to 150 °C

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