MPN

Infineon SN7002I Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002IXTSA1

RS Stock No.:: 225-0584
Mfr. Part No.:: SN7002IXTSA1
Brand:: Infineon

Infineon SN7002I Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002IXTSA1

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Subtotal (1 pack of 100 units)*

£7.40

(exc. VAT)

£8.90

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

700 unit(s) ready to ship

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Units	Per unit	Per Pack*
100 - 400	£0.074	£7.40
500 - 900	£0.048	£4.80
1000 - 2400	£0.045	£4.50
2500 - 4900	£0.042	£4.20
5000 +	£0.03	£3.00

*price indicative

RS Stock No.:: 225-0584
Mfr. Part No.:: SN7002IXTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	200mA
	Maximum Drain Source Voltage Vds	60V
	Series	SN7002I
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	360mW
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	0.9nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	1.1 mm
	Length	3.4mm
	Height	3.4mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 200mA
	Maximum Drain Source Voltage Vds 60V
	Series SN7002I
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 360mW
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 0.9nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 1.1 mm
	Length 3.4mm
	Height 3.4mm
	Automotive Standard No

Datasheet-SN7002IXTSA1

The Infineon SN7002I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.

PCB-space and cost savings

Gate drive flexibility

Reduced design complexity

Environmentally friendly

High overall efficiency