Toshiba Silicon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 T2N7002AK,LM(T

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Subtotal (1 reel of 3000 units)*

£54.00

(exc. VAT)

£66.00

(inc. VAT)

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3000 +£0.018£54.00

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RS Stock No.:
236-3584
Mfr. Part No.:
T2N7002AK,LM(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Transistor Material

Silicon

Number of Elements per Chip

1

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.

Storage temperature range −55 to 150 °C

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