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Infineon StrongIRFET Type N-Channel MOSFET & Diode, 363 A, 60 V Enhancement, 7-Pin TO-263 IRF60SC241ARMA1

RS Stock No.:: 220-7472
Mfr. Part No.:: IRF60SC241ARMA1
Brand:: Infineon

Infineon StrongIRFET Type N-Channel MOSFET & Diode, 363 A, 60 V Enhancement, 7-Pin TO-263 IRF60SC241ARMA1

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Subtotal (1 pack of 2 units)*

£5.90

(exc. VAT)

£7.08

(inc. VAT)

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In Stock

Plus 1,370 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
2 - 18	£2.95	£5.90
20 - 48	£2.745	£5.49
50 - 98	£2.565	£5.13
100 - 198	£2.39	£4.78
200 +	£2.215	£4.43

*price indicative

RS Stock No.:: 220-7472
Mfr. Part No.:: IRF60SC241ARMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	363A
	Maximum Drain Source Voltage Vds	60V
	Series	StrongIRFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	0.95mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	311nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.4W
	Maximum Operating Temperature	175°C
	Width	9.45 mm
	Height	4.4mm
	Length	10.2mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 363A
	Maximum Drain Source Voltage Vds 60V
	Series StrongIRFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 0.95mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 311nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.4W
	Maximum Operating Temperature 175°C
	Width 9.45 mm
	Height 4.4mm
	Length 10.2mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRF60SC241ARMA1

The Infineon latest 60 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.

Low RDS(on)

High current capability

Industry standard package

Flexible pinout

Optimized for 10 V gate drive

Reduction in conduction losses

Increased power density

Drop in replacement to existing devices

Offers design flexibility

Provides immunity to false turn-on in noisy environments