Infineon StrongIRFET Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V DirectFET ISOMETRIC IRF6613TRPBF
- RS Stock No.:
- 220-7473
- Mfr. Part No.:
- IRF6613TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4800 units)*
£2,860.80
(exc. VAT)
£3,432.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
4800 + | £0.596 | £2,860.80 |
*price indicative
- RS Stock No.:
- 220-7473
- Mfr. Part No.:
- IRF6613TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 40 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DirectFET ISOMETRIC | |
Series | StrongIRFET | |
Mounting Type | Surface Mount | |
Maximum Drain Source Resistance | 0.0035 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 20V | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DirectFET ISOMETRIC | ||
Series StrongIRFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 0.0035 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 20V | ||
Number of Elements per Chip 2 | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1-2 NH) inductance package
Wide availability from distribution partners
Industry standard qualification level
High current carrying capability
Optimum thermal performance
Compact form factor
High efficiency
Environmentally friendly
Product qualification according to JEDEC standard
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1-2 NH) inductance package
Wide availability from distribution partners
Industry standard qualification level
High current carrying capability
Optimum thermal performance
Compact form factor
High efficiency
Environmentally friendly
Related links
- Infineon StrongIRFET Dual N-Channel MOSFET Transistor & Diode 40 V DirectFET ISOMETRIC IRF6613TRPBF
- Infineon DirectFET N-Channel MOSFET 40 V DirectFET ISOMETRIC IRF7946TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V DirectFET ISOMETRIC AUIRL7736M2TR
- Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode 40 V, 8-Pin TDSON BSC014N04LSTATMA1
- Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode 40 V, 8-Pin SuperSO8 5 x 6 IPC100N04S5L1R1ATMA1
- Infineon DirectFET N-Channel MOSFET 100 V DirectFET ISOMETRIC IRF6645TRPBF
- Infineon DirectFET 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
- Infineon DirectFET 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF