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Infineon StrongIRFET N-Channel MOSFET, 240 A, 60 V, 7-Pin D2PAK-7 IRFS7534TRL7PP

RS Stock No.:: 820-8861
Mfr. Part No.:: IRFS7534TRL7PP
Brand:: Infineon

Infineon StrongIRFET N-Channel MOSFET, 240 A, 60 V, 7-Pin D2PAK-7 IRFS7534TRL7PP

Subtotal (1 pack of 2 units)*

£4.50

(exc. VAT)

£5.40

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2 unit(s) ready to ship

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Units	Per unit	Per Pack*
2 +	£2.25	£4.50

*price indicative

RS Stock No.:: 820-8861
Mfr. Part No.:: IRFS7534TRL7PP
Brand:: Infineon

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

Infineon StrongIRFET Series MOSFET, 240A Maximum Continuous Drain Current, 290W Maximum Power Dissipation - IRFS7534TRL7PP

This MOSFET is designed for high-performance applications, offering reliability and efficiency. It significantly enhances the performance of various electronic systems, especially in power management and motor drive applications, and is suitable for diverse industries including automation and electronics.

Features & Benefits

• Low on-resistance minimises power losses
• Enhanced body diode capability boosts overall efficiency
• Continuous drain current capacity of 240A meets stringent requirements
• Versatile gate voltage threshold allows improved control
• Robust avalanche rating increases reliability

Applications

• Applicable in brushed and BLDC motor drive systems
• Suitable for battery-operated circuits
• Effective in half-bridge and full-bridge configurations
• Utilised in synchronous rectifier solutions
• Employed in DC/DC and AC/DC converters

What is the maximum temperature the component can operate at?

The component can operate at a maximum junction temperature of +175°C, enabling functionality in challenging environments without performance loss.

How does the MOSFET handle power dissipation?

It has a maximum power dissipation capability of 290W when mounted on suitable PCB configurations, ensuring consistent performance during operation.

What is the significance of the gate-to-source voltage rating?

The gate-to-source voltage rating of ±20V specifies the allowable voltages applied, ensuring safe operation across various applications.

Can this MOSFET be integrated into existing circuit designs?

Yes, it features standard D2PAK-7 packaging, making it compatible with a broad range of PCB designs and facilitating easy integration into current systems.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	240 A
	Maximum Drain Source Voltage	60 V
	Series	StrongIRFET
	Package Type	D2PAK-7
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	1.95 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.7V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	290 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	200 nC @ 10 V
	Width	9.65mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Length	10.67mm
	Height	4.83mm
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 240 A
	Maximum Drain Source Voltage 60 V
	Series StrongIRFET
	Package Type D2PAK-7
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 1.95 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.7V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 290 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 200 nC @ 10 V
	Width 9.65mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Length 10.67mm
	Height 4.83mm
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C

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