Infineon CoolMOS CSFD Dual N-Channel MOSFET, 236 A, 650 V, 3-Pin TO-247 IPW60R037CSFDXKSA1

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Subtotal (1 tube of 30 units)*

£213.69

(exc. VAT)

£256.44

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30£7.123£213.69
60 - 120£6.767£203.01
150 +£6.339£190.17

*price indicative

RS Stock No.:
219-6020
Mfr. Part No.:
IPW60R037CSFDXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

236 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolMOS CSFD

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.037 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

2

The Infineon IPW60R037CSFD CoolMOS superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behaviour it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.

Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness

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