Infineon CoolMOS CSFD Dual N-Channel MOSFET, 236 A, 650 V, 3-Pin TO-247 IPW60R037CSFDXKSA1

Bulk discount available

Subtotal (1 unit)*

£8.58

(exc. VAT)

£10.30

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4£8.58
5 - 9£7.89
10 - 24£7.38
25 - 49£6.86
50 +£6.35

*price indicative

Packaging Options:
RS Stock No.:
219-6021
Mfr. Part No.:
IPW60R037CSFDXKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

236 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CSFD

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.037 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

2

The Infineon IPW60R037CSFD CoolMOS superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behaviour it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.

Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness

Related links