Infineon CoolMOS CSFD Dual N-Channel MOSFET, 236 A, 650 V, 3-Pin TO-247 IPW60R037CSFDXKSA1
- RS Stock No.:
- 219-6021
- Mfr. Part No.:
- IPW60R037CSFDXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£8.58
(exc. VAT)
£10.30
(inc. VAT)
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Temporarily out of stock
- Shipping from 20 March 2026
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Units | Per unit |
|---|---|
| 1 - 4 | £8.58 |
| 5 - 9 | £7.89 |
| 10 - 24 | £7.38 |
| 25 - 49 | £6.86 |
| 50 + | £6.35 |
*price indicative
- RS Stock No.:
- 219-6021
- Mfr. Part No.:
- IPW60R037CSFDXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 236 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | CoolMOS CSFD | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.037 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 236 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series CoolMOS CSFD | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.037 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 2 | ||
The Infineon IPW60R037CSFD CoolMOS superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behaviour it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Related links
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