Infineon CoolMOS CSFD Dual N-Channel MOSFET, 360 A, 650 V, 3-Pin TO-247 IPW60R024CFD7XKSA1
- RS Stock No.:
- 219-6017
- Mfr. Part No.:
- IPW60R024CFD7XKSA1
- Brand:
- Infineon
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Subtotal (1 unit)*
£10.33
(exc. VAT)
£12.40
(inc. VAT)
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In Stock
- 57 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 4 | £10.33 |
| 5 - 9 | £9.09 |
| 10 - 24 | £8.47 |
| 25 - 49 | £7.95 |
| 50 + | £7.33 |
*price indicative
- RS Stock No.:
- 219-6017
- Mfr. Part No.:
- IPW60R024CFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 360 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS CSFD | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.024 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 360 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS CSFD | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.024 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 2 | ||
The Infineon CoolMOS CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Related links
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