STMicroelectronics SCTH40N MOSFET, 33 A, 1200 V, 7-Pin H2PAK-7 SCTH40N120G2V-7
- RS Stock No.:
- 219-4221
- Mfr. Part No.:
- SCTH40N120G2V-7
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 219-4221
- Mfr. Part No.:
- SCTH40N120G2V-7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Drain Current | 33 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | H2PAK-7 | |
| Series | SCTH40N | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.105 O | |
| Maximum Gate Threshold Voltage | 5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type H2PAK-7 | ||
Series SCTH40N | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.105 O | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
AEC-Q101 qualified
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
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