STMicroelectronics SCTH40N MOSFET, 33 A, 1200 V, 7-Pin H2PAK-7 SCTH40N120G2V-7

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£13.96

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£16.75

(inc. VAT)

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5 - 9£13.27
10 - 24£12.88
25 - 49£12.55
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Packaging Options:
RS Stock No.:
219-4222
Mfr. Part No.:
SCTH40N120G2V-7
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Package Type

H2PAK-7

Series

SCTH40N

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.105 O

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

AEC-Q101 qualified
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance

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