STMicroelectronics SCT025H120G3AG SiC N-Channel MOSFET, 55 A, 1200 V, 7-Pin H2PAK-7 SCT025H120G3AG
- RS Stock No.:
- 214-951
- Mfr. Part No.:
- SCT025H120G3AG
- Brand:
- STMicroelectronics
Discontinued
- RS Stock No.:
- 214-951
- Mfr. Part No.:
- SCT025H120G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 55 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | SCT025H120G3AG | |
| Package Type | H2PAK-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series SCT025H120G3AG | ||
Package Type H2PAK-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Very fast and robust intrinsic body diode
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