STMicroelectronics SCTH50N120-7 SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK-7 SCTH50N120-7
- RS Stock No.:
- 204-3954
- Mfr. Part No.:
- SCTH50N120-7
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 204-3954
- Mfr. Part No.:
- SCTH50N120-7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 55 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | H2PAK-7 | |
| Series | SCTH50N120-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.065 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.1V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type H2PAK-7 | ||
Series SCTH50N120-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.065 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.1V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very tight variation of on-resistance vs.
temperature
Very fast and robust intrinsic body diode
Low capacitance
temperature
Very fast and robust intrinsic body diode
Low capacitance