STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK
- RS Stock No.:
- 224-9997
- Mfr. Part No.:
- SCTH35N65G2V-7AG
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 224-9997
- Mfr. Part No.:
- SCTH35N65G2V-7AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 208W | |
| Forward Voltage Vf | 3.3V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.8 mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 15.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 208W | ||
Forward Voltage Vf 3.3V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.8 mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 15.25mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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