STMicroelectronics STH65N N-Channel MOSFET, 51 A, 650 V, 7-Pin H2PAK-7 STH65N050DM9-7AG

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RS Stock No.:
481-129
Mfr. Part No.:
STH65N050DM9-7AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

650 V

Package Type

H2PAK-7

Series

STH65N

Mounting Type

Surface Mount

Pin Count

7

Number of Elements per Chip

1

COO (Country of Origin):
CN
The STMicroelectronics N-Channel Power MOSFET is built on advanced super-junction MDmesh DM9 technology, designed for medium to high voltage applications. It features extremely low RDS(on) per area and a fast-recovery diode, making it ideal for high-efficiency switching. The DM9 silicon technology utilizes a multi-drain manufacturing process that enhances device structure and performance. With very low recovery charge (Qrr), fast recovery time (trr), and low RDS(on), this MOSFET is optimized for demanding bridge topologies and ZVS phase-shift converters.

Low gate charge and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
AEC-Q101 qualified

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