STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG
- RS Stock No.:
- 224-9999
- Mfr. Part No.:
- SCTH35N65G2V-7AG
- Brand:
- STMicroelectronics
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Units | Per unit |
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1 - 4 | £12.10 |
5 - 9 | £11.49 |
10 - 24 | £10.74 |
25 - 49 | £10.48 |
50 + | £10.21 |
*price indicative
- RS Stock No.:
- 224-9999
- Mfr. Part No.:
- SCTH35N65G2V-7AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 45 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | H2PAK-7 | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 0.067 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type H2PAK-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.067 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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