STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG

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£14.52

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  • Plus 38 unit(s) shipping from 27 October 2025
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Packaging Options:
RS Stock No.:
224-9999
Mfr. Part No.:
SCTH35N65G2V-7AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Package Type

H2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.067 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

2

Transistor Material

Si

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency

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