STMicroelectronics SCTH90 SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H2PAK-7 SCTH90N65G2V-7
- RS Stock No.:
- 201-0869
- Mfr. Part No.:
- SCTH90N65G2V-7
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
£23.79
(exc. VAT)
£28.55
(inc. VAT)
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- Shipping from 26 June 2026
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Units | Per unit |
|---|---|
| 1 - 4 | £23.79 |
| 5 - 9 | £22.35 |
| 10 - 24 | £21.17 |
| 25 - 49 | £19.98 |
| 50 + | £19.29 |
*price indicative
- RS Stock No.:
- 201-0869
- Mfr. Part No.:
- SCTH90N65G2V-7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 116 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | H2PAK-7 | |
| Series | SCTH90 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.024 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 116 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type H2PAK-7 | ||
Series SCTH90 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.024 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
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