STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK SCTH90N65G2V-7
- RS Stock No.:
- 201-0869
- Mfr. Part No.:
- SCTH90N65G2V-7
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£22.07
(exc. VAT)
£26.48
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £22.07 |
| 5 - 9 | £20.73 |
| 10 - 24 | £19.64 |
| 25 - 49 | £18.54 |
| 50 + | £17.90 |
*price indicative
- RS Stock No.:
- 201-0869
- Mfr. Part No.:
- SCTH90N65G2V-7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 116A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Series | SCTH90 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 484W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.8 mm | |
| Length | 15.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 116A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Series SCTH90 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 484W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Maximum Operating Temperature 175°C | ||
Height 10.4mm | ||
Standards/Approvals No | ||
Width 4.8 mm | ||
Length 15.25mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
Related links
- STMicroelectronics SCTH90 SiC N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCTH90N65G2V-7
- STMicroelectronics SCT SiC N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCT027H65G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCT018H65G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET Module 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT070H120G3-7
- STMicroelectronics SCT SiC N-Channel MOSFET 900 V, 7-Pin H2PAK-7 SCT012H90G3AG
- STMicroelectronics SCT025H120G3AG SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT025H120G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT070H120G3AG