Infineon CoolMOS™ N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FP IPAN60R650CEXKSA1

View all MOSFETs
Bulk discount available

Subtotal (1 tube of 50 units)*

£45.65

(exc. VAT)

£54.80

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
Per Tube*
50 - 50£0.913£45.65
100 - 200£0.694£34.70
250 - 450£0.648£32.40
500 - 1200£0.603£30.15
1250 +£0.557£27.85

*price indicative

RS Stock No.:
217-2496
Mfr. Part No.:
IPAN60R650CEXKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

650 mO

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links