Infineon CoolMOS™ N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FP IPAN60R650CEXKSA1
- RS Stock No.:
- 217-2496
- Mfr. Part No.:
- IPAN60R650CEXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£45.65
(exc. VAT)
£54.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.913 | £45.65 |
| 100 - 200 | £0.694 | £34.70 |
| 250 - 450 | £0.648 | £32.40 |
| 500 - 1200 | £0.603 | £30.15 |
| 1250 + | £0.557 | £27.85 |
*price indicative
- RS Stock No.:
- 217-2496
- Mfr. Part No.:
- IPAN60R650CEXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.9 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 650 mO | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.9 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 650 mO | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
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