SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 onsemi NVH4L160N120SC1
- RS Stock No.:
- 202-5743
- Mfr. Part No.:
- NVH4L160N120SC1
- Brand:
- onsemi
Available to back order for despatch 13/06/2024
Added
Price Each (In a Pack of 5)
£13.46
(exc. VAT)
£16.15
(inc. VAT)
| Units | Per unit | Per Pack* |
| 5 - 5 | £13.46 | £67.30 |
| 10 - 20 | £13.094 | £65.47 |
| 25 - 95 | £12.752 | £63.76 |
| 100 - 245 | £12.424 | £62.12 |
| 250 + | £12.114 | £60.57 |
| *price indicative | ||
- RS Stock No.:
- 202-5743
- Mfr. Part No.:
- NVH4L160N120SC1
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant
100% avalanche tested
Low effective output capacitance
RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 17.3 A |
| Maximum Drain Source Voltage | 1200 V |
| Series | NVH |
| Package Type | TO-247-4 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.16 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
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