onsemi NVH SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 NVH4L160N120SC1

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Subtotal (1 pack of 5 units)*

£31.88

(exc. VAT)

£38.255

(inc. VAT)

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Per Pack*
5 - 45£6.376£31.88
50 +£5.496£27.48

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Packaging Options:
RS Stock No.:
202-5743
Mfr. Part No.:
NVH4L160N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17.3 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Series

NVH

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.16 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Transistor Material

SiC

Number of Elements per Chip

1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant

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