SiC N-Channel MOSFET Transistor, 102 A, 1200 V, 4-Pin TO-247-4 onsemi NVH4L020N120SC1
- RS Stock No.:
- 202-5735
- Mfr. Part No.:
- NVH4L020N120SC1
- Brand:
- onsemi
Available to back order for despatch when stock is available
Added
Price Each
£63.63
(exc. VAT)
£76.36
(inc. VAT)
| Units | Per unit |
| 1 - 9 | £63.63 |
| 10 - 24 | £61.91 |
| 25 - 99 | £60.28 |
| 100 - 249 | £58.74 |
| 250 + | £57.27 |
- RS Stock No.:
- 202-5735
- Mfr. Part No.:
- NVH4L020N120SC1
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 102 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247-4 |
| Series | NVH |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.028 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |