onsemi NVH SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247-4 NVH4L040N120SC1

Subtotal (1 pack of 2 units)*

£22.30

(exc. VAT)

£26.76

(inc. VAT)

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Packaging Options:
RS Stock No.:
202-5738
Mfr. Part No.:
NVH4L040N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Series

NVH

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.056 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Transistor Material

SiC

Number of Elements per Chip

1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance

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