onsemi NVH SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247-4 NVH4L040N120SC1

Subtotal (1 tube of 450 units)*

£6,150.60

(exc. VAT)

£7,380.90

(inc. VAT)

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Units
Per unit
Per Tube*
450 +£13.668£6,150.60

*price indicative

RS Stock No.:
202-5737
Mfr. Part No.:
NVH4L040N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

1200 V

Series

NVH

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.056 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance

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