onsemi NVH SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 NVH4L160N120SC1

Subtotal (1 tube of 450 units)*

£2,539.80

(exc. VAT)

£3,047.85

(inc. VAT)

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Units
Per unit
Per Tube*
450 +£5.644£2,539.80

*price indicative

RS Stock No.:
202-5741
Mfr. Part No.:
NVH4L160N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17.3 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Series

NVH

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.16 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant

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