onsemi NVH SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 NVH4L080N120SC1
- RS Stock No.:
- 202-5739
- Mfr. Part No.:
- NVH4L080N120SC1
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 202-5739
- Mfr. Part No.:
- NVH4L080N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 29 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247-4 | |
| Series | NVH | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.08 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.3V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247-4 | ||
Series NVH | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.08 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.3V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter, Automotive Auxiliary Motor Drive applications.
AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant
100% avalanche tested
Low effective output capacitance
RoHS compliant
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