Vishay TrenchFET® Gen III P-Channel MOSFET, 127.5 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS63DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£990.00

(exc. VAT)

£1,200.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.33£990.00

*price indicative

RS Stock No.:
200-6848
Mfr. Part No.:
SiSS63DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

127.5 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET® Gen III

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.007 Ω, 0.0027 Ω, 0.0036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Number of Elements per Chip

1

The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.

TrenchFET Gen III p-channel power MOSFET
Leadership RDS(on) in compact and thermally enhanced package
100 % Rg and UIS tested

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