Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3

Subtotal (1 reel of 3000 units)*

£732.00

(exc. VAT)

£879.00

(inc. VAT)

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Being discontinued
  • Final 3,000 unit(s), ready to ship
Units
Per unit
Per Reel*
3000 +£0.244£732.00

*price indicative

RS Stock No.:
919-4299
Mfr. Part No.:
SISS27DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.3mm

Typical Gate Charge @ Vgs

92 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

3.3mm

Minimum Operating Temperature

-55 °C

Height

0.78mm

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