- RS Stock No.:
- 200-6849
- Mfr. Part No.:
- SiSS63DN-T1-GE3
- Brand:
- Vishay
Available to back order for despatch 18/11/2024
Price Each (In a Pack of 50)
£0.633
(exc. VAT)
£0.76
(inc. VAT)
Units | Per unit | Per Pack* |
---|---|---|
50 - 50 | £0.633 | £31.65 |
100 - 200 | £0.506 | £25.30 |
250 - 450 | £0.443 | £22.15 |
500 - 1200 | £0.367 | £18.35 |
1250 + | £0.342 | £17.10 |
*price indicative
- RS Stock No.:
- 200-6849
- Mfr. Part No.:
- SiSS63DN-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
Product Details
The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.
TrenchFET Gen III p-channel power MOSFET
Leadership RDS(on) in compact and thermally enhanced package
100 % Rg and UIS tested
Leadership RDS(on) in compact and thermally enhanced package
100 % Rg and UIS tested
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 127.5 A |
Maximum Drain Source Voltage | 20 V |
Series | TrenchFET® Gen III |
Package Type | PowerPAK 1212-8S |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 0.007 Ω, 0.0027 Ω, 0.0036 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.5V |
Number of Elements per Chip | 1 |
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