P-Channel MOSFET, 127.5 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS63DN-T1-GE3

RS Stock No.:: 200-6849
Mfr. Part No.:: SiSS63DN-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 127.5 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS63DN-T1-GE3

Available to back order for despatch 18/11/2024

Price Each (In a Pack of 50)

£0.633

(exc. VAT)

£0.76

(inc. VAT)

Units	Per unit	Per Pack*
50 - 50	£0.633	£31.65
100 - 200	£0.506	£25.30
250 - 450	£0.443	£22.15
500 - 1200	£0.367	£18.35
1250 +	£0.342	£17.10

*price indicative

RS Stock No.:: 200-6849
Mfr. Part No.:: SiSS63DN-T1-GE3
Brand:: Vishay

Technical Reference

Document- SiSS63DN-T1-GE3

Legislation and Compliance

Product Details

The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.

TrenchFET Gen III p-channel power MOSFET
Leadership RDS(on) in compact and thermally enhanced package
100 % Rg and UIS tested

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	127.5 A
Maximum Drain Source Voltage	20 V
Series	TrenchFET® Gen III
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	0.007 Ω, 0.0027 Ω, 0.0036 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Number of Elements per Chip	1

P-Channel MOSFET, 127.5 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS63DN-T1-GE3

Technical Reference

Legislation and Compliance

Product Details

Specifications

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