Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8SCD SiSF20DN-T1-GE3
- RS Stock No.:
- 188-5025
- Mfr. Part No.:
- SiSF20DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£9.99
(exc. VAT)
£11.99
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,995 unit(s) shipping from 23 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.998 | £9.99 |
| 50 - 120 | £1.796 | £8.98 |
| 125 - 245 | £1.498 | £7.49 |
| 250 - 495 | £1.194 | £5.97 |
| 500 + | £1.002 | £5.01 |
*price indicative
- RS Stock No.:
- 188-5025
- Mfr. Part No.:
- SiSF20DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 52 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerPAK 1212-8SCD | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 18 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 69.4 W | |
| Transistor Configuration | Common Drain | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Length | 3.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.4mm | |
| Number of Elements per Chip | 2 | |
| Height | 0.75mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 52 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerPAK 1212-8SCD | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 18 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 69.4 W | ||
Transistor Configuration Common Drain | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Length 3.4mm | ||
Maximum Operating Temperature +150 °C | ||
Width 3.4mm | ||
Number of Elements per Chip 2 | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
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