Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8SCD SiSF20DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£2,022.00

(exc. VAT)

£2,427.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.674£2,022.00

*price indicative

RS Stock No.:
188-4891
Mfr. Part No.:
SiSF20DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8SCD

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

69.4 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

22 nC @ 10 V

Length

3.4mm

Width

3.4mm

Height

0.75mm

Minimum Operating Temperature

-55 °C

Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET.

TrenchFET® Gen IV power MOSFET
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package

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