Vishay TrenchFET® Gen IV N-Channel MOSFET, 92.5 A, 60 V, 8-Pin PowerPAK 1212-8S SiSS22LDN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£1,197.00

(exc. VAT)

£1,437.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.399£1,197.00

*price indicative

RS Stock No.:
200-6854
Mfr. Part No.:
SiSS22LDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

92.5 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8S

Series

TrenchFET® Gen IV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0051 Ω, 0.00365 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

The Vishay SiSS22LDN-T1-GE3 is a N-channel 60V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested

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